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| PRODUCT SPECIFICATIONS (R) Integrated Circuits Group LH28F800BVB-TTL90 8M (1M x 8/512K x 16) (Model No.: LHF80V07) Flash Memory Spec No.: EL114067 Issue Date: August 27, 1999 SHARP LHFSOVO7 @Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. l When using the products covered herein, please observe the conditions written herein and the precautions outlined in the following paragraphs. In no event shall the company be liable for any damages resulting from failure to strictly adhere to these conditions and precautions. (1) The products covered herein are designed and manufactured for the following application areas. When using the products covered herein for the equipment listed in Paragraph (2), even for the following application areas, be sure to observe the precautions given in Paragraph (2). Never use the products for the equipment listed in Paragraph (3). *Office electronics *Instrumentation and measuring equipment *Machine tools *Audiovisual equipment *Home appliance *Communication equipment other than for trunk lines (2) Those contemplating using the products covered herein for the following equipment which demands high reliabilitv, should first contact a sales representative of the company and then accept responsibility for incorporating into the design fail-safe operation, redundancy, and other appropriate measures for ensuring reliability and safety of the equipment and the overall system. *Control and safety devices for airplanes, transportation equipment *Mainframe computers *Traffic control systems l Gas leak detectors and automatic cutoff devices *Rescue and security equipment *Other safety devices and safety equipment, etc. trains, automobiles, and other (3) Do not use the products covered herein for the following equipment which demands extremely high performance in terms of functionality, reliability, or accuracy. *Aerospace equipment l Communications equipment for trunk lines *Control equipment for the nuclear power industry l Medical equipment related to life support, etc. (4) Please direct all queries and comments regarding the interpretation Paragraphs to a sales representative of the company. of the above three @Please direct all queries regarding the products covered herein to a sales representative of the company. Rev. 1.1 SliARP LHF80V07 1 CONTENTS PAGE PAGE 1 INTRODUCTION.. ........................................................... .3 3 .3 5 DESIGN CONSIDERATIONS ...................................... 20 20 20 1. I Features ........................................................................ 1.2 Product Overview.. ...................................................... 2 PRINCIPLES OF OPERATION.. 5.1 Three-Line Output Control ....................................... 5.2 RY/BY# and Block Erase and Word/Byte Write Polling.. .................................................................... ..................................... .7 8 5.3 Power Supply Decoupling ........................................ 20 5.4 V,, Trace on Printed Circuit Boards ........................ 20 5.5 V,, . V,,, RP# Transitions.. ..................................... 21 5.6 Power-Up/Down Protection.. .................................... 2 1 21 2.1 Data Protection.. ........................................................... 3 BUS OPERATION ........................................................... .8 .8 .8 8 8 3.1 Read.. ........................................................................... 3.2 Output Disable.. ........................................................... 3.3 Standby ......................................................................... 3.4 Deep Power-Down.. ..................................................... 5.7 Power Dissipation.. ................................................... 6 ELECTRICAL SPECIFICATIONS ............................... 22 22 22 24 6.1 Absolute Maximum Ratings ..................................... 22 6.2 Operating Conditions ................................................ 6.2.1 Capacitance.. ....................................................... 6.2.3 DC Characteristics .............................................. 3.5 Read Identifier Codes Operation.. ............................... .9 3.6 Write.. ............................................. . ............................ .9 4 COMMAND DEFINITIONS.. ................ .:......................... 9 12 6.2.2 AC Input/Output Test Conditions ....................... 23 6.2.4 AC Characteristics - Read-Only Operations.. ..... 26 6.2.5 AC Characteristics - Write Operations ............... 29 6.2.6 Alternative CE#-Controlled 6.2.8 Block Erase and Word/Byte 7 PACKAGE AND PACKING Writes.. ................... 3 1 33 Write Performance 34 ......... 35 6.2.7 Reset Operations ................................................. 4.1 Read Array Command ................................................ 4.2 Read Identifier Codes Command ............................... 12 4.3 Read Status Register Command.. ............................... 12 4.4 Clear Status Register Command ................................. 12 4.5 Block Erase Command.. ............................................. 12 4.6 Word/Byte Write Command.. ..................................... 13 4.7 Block Erase Suspend Command ................................ 13 4.8 Word/Byte Write Suspend Command.. ...................... 14 4.9 Considerations of Suspend.. ....................................... 14 4.10 Block Locking.. ........................................................ 4.10.1 V,,=V,, 4.10.2 WP#=V,, 4.10.3 WP#=V,, 14 for Complete Protection.. .................... 14 for Block Locking.. ............................ 14 for Block Unlocking.. ........................ 14 SPECIFICATIONS Rev. 1.1 SHARIP LHF80V07 2 LH28F8OOBVB-TTL90 8M-BIT (1Mbit x 8 / 5 12Kbit x 16) Smart3 Flash MEMORY n Smart3 Technology - 2.7V-3.6V Vcc - 2.7V-3.6V or 11.4V-12.6V Vpp x8 or x 16 Operation n Enhanced Data Protection Features - Absolute Protection with Vpp=GND - Block Erase and Word/Byte Write Lockout during Power Transitions - Boot Blocks Protection with WP#=VIL n Automated Word/Byte Write and Block Erase - Command User Interface - Status Register n Low Power Management - Deep Power-Down Mode - Automatic Power Savings Mode Decreases ICC in Static Mode n SRAM-Compatible Write Interface n User-Configurable n High-Performance Access Time - 90ns(2.7V-3.6V) n Operating Temperature - 0C to +7O"C n Optimized Array Blocking Architecture - Two 4K-word Boot Blocks - Six 4K-word Parameter Blocks - Fifteen 32K-word Main Blocks - Top Boot Location n Extended Cycling Capability - 100,000 Block Erase Cycles n Enhanced Automated Suspend Options - Word/Byte Write Suspend to Read - Block Erase Suspend to Word/Byte Write - Block Erase Suspend to Read n Chip Size Packaging - 48-Ball CSP n ETOXTM* Nonvolatile Flash Technology n CMOS Process (P-type silicon substrate) n Not designed or rated as radiation hardened nonvolatile, read/write and V,,=2.7V-3.6V SHARP's LH28F800BVB-TTL90 Flash memory with Smart3 technology is a high-density, low-cost, storage solution for a wide range of applications. LH28F800BVB-TTL90 can operate at V,,=2.7V-3.6V Its low voltage operation capability realize battery life and suits for cellular phone application. Its Boot. Parameter and Main-blocked architecture, flexible voltage and extended cycling provide for highly flexible :omponent suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either lirectly executed out of flash or downloaded to DRAM, the LH28F8OOBVB-TTL90 offers two levels of protection: absolute lrotection with V,, at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their :ode security needs. Ihe LH28F800BVB-TTL90 is manufactured on SHARP's 0.35um ETOXTM* lackage: the 48-ball CSP ideal for board constrained applications. "ETOX is a trademark of Intel Corporation process technology. It come in chip-size Rev. 1.1 SHARP LHF8OVO7 3 1 INTRODUCTION This datasheet contains LH28F800BVB-TI'L90 specifications. Section 1 provides a flash memory overview. Sections 2,3,4 and 5 describe the memory organization and functionality. Section 6 covers electrical specifications. V,,=12V maximizes block erase and word/byte write performance. In addition to flexible erase and program voltages. the dedicated V,, pin gives complete data protection when VPplVPPLK. Table 1. V,, and V,, Voltage Combinations Offered by Smart3 Technoloav V,, Voltage V,, Voitage 2.7V-3.6V 1 2.7V-3.6V, 11.4V-12.6V 1 LzJ 1.1 Features Key enhancements Flash memory are: *Smart3 Technology *Enhanced Suspend Capabilities *Boot Block Architecture Please note following important differences: of LH28F8OOBVB-TTL90 Smart3 i Internal V,, and V,, detection Circuitry automatically configures the device for optimized read and write operations. A Command User Interface (CUI) serves as the interface between the system processor and internal operation of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algorithms and timings necessary for block erase and word/byte write operations. A block erase operation erases one of the device's 32Kword blocks typically within 0.51s (2.7V-3.6V V,,, 11.4V-12.6V V,,), 4K-word blocks typically within 0.3 1s (2.7V-3.6V V,,, 11.4V-12.6V V,,) independent of other blocks. Each block can be independently erased 100,000 times. Block erase suspend mode allows system software to suspend block erase to read or write data from any other block. Writing memory data is performed in word/byte increments of the device's 32K-word blocks typically within 12.6~~ (2.7V-3.6V V,,, 11.4V-12.6V V,,), 4Kword blocks typically within 24.5~~ (2.7V-3.6V V,,, 11.4V-12.6V V,,). Word/byte write suspend mode enables the system to read data or execute code from any other flash memory array location. l VPPLK has been lowered to 1.5V to support 2.7V-3.6V block erase and word/byte write operations. The V,, voltage transitions to GND is recommended for designs that switch V,, off during read operation. *To take advantage of Smart3 technology, allow V,, and V,, connection to 2.7V-3.6V. 1.2 Product Overview The LH28F800BVB-TTL90 is a high-performance 8M-bit Smart3 Flash memory organized as lM-byte of 8 bits or 512K-word of 16 bits. The lM-byte/512K-word of data is uranged in two 8K-byte/4K-word boot blocks, six SKJytel4K-word parameter blocks and fifteen 64K-byte/32Kword main blocks which are individually erasable intystem. The memory map is shown in Figure 3. Smart3 technology provides a choice of V,, and V,, :ombinations, as shown in Table 1, to meet system xrformance and power expectations. V,, at 2.7V-3.6V :liminates the need for a separate 12V converter, while Rev. 1.1 SHARP LHF8OVO7 4 The boot blocks can be locked for the WP# pin. Block erase or word/byte write for boot block must not be carried out by WP# to Low and RP# to V,,. The status register indicates when the WSM's block erase or word/byte write operation is finished. The RY/BY# output gives an additional indicator of WSM activity by providing both a hardware signal of status (versus software polling) and status masking (interrupt masking for background block erase, for example). Status polling using RY/BY# minimizes both CPU overhead and system power consumption. When low, RY/BY# indicates that the WSM is performing a block erase or word/byte write. RY/BY#-high Z indicates that the WSM is ready for a new command, block erase is suspended (and word/byte write is inactive), word/byte write is suspended, or the device is in deep power-down mode. The access time is 90ns (tAv v) over the commercial temperature range (O'C to +70 43 ) and V,, supply voltage range of 2.7V-3.6V. The Automatic Power Savings (APS) feature substar&& reduces active current when the device is in static modf (addresses not switching). In APS mode, the typical I,, current is 3 mA at 2.7V V,,. When CE# and RP# pins are at V,-,, the I,, CM05 standby mode is enabled. When the RP# pin is at GND deep power-down mode is enabled which minimize: power consumption and provides write protection during reset. A reset time (tpHQv) is required from RP# switching high until outputs are valid. Likewise, the device has i wake time (tpHEL ) from RP#-high until writes to the CUI are recognized. With RP# at GND, the WSM is reset ant the status register is cleared. The device is available in 48-ball Package). Pinout is shown in Figure 2. CSP (Chip Size Rev. 1.1 SHARP LHF8OVO7 5 DUO-DQls r Figure 1. Block Diagram 1 A 2 A5 6 7 8 .%`I B C D 0 0 0 Al 0 A? A3 F 0 % 0 A4 0 0 DQ8 0 00 DQo Ao OE# CE# A8 All 000 AIO 000 Al? 000 DQ6 0 0 QM DQ5 00 Ql? DQ7 00 NC A9 AI? Al5 4%BALL A16 CSP PINOUT 8mm x 8mm TOP VIEW Figure 2. CSP #-Ball Pinout Rev. 1.1 SHARP LHF8OVO7 r Symbol A-, Ao-Al8 6 Type ADDRESS INPUT A-1 Ao-Alo 1 DQo-DQ,, INPUT/ OUTPUT CE# INPUT RP# INPUT OE# WE# WP# BYTE# INPUT INPUT INPUT INPUT OPEN DRAIN DUTPUT RY/BY# SUPPLY VCC SUPPLY SUPPLY GND NC All-*,, < DATA INPUT/OUTPUTS: DQo-DQ-/:Inputs data and commands during CUI write cycles; outputs data during memory array, status register and identifier code read cycles. Data pins float to high-impedance when the chip is deselected or outputs are disabled. Data is internally latched during a write cycle. DQs-DQ, j:Inputs data during CUI write cycles in xl6 mode; outputs data during memory array read cycles in x 16 mode; not used for status register and identifier code read mode. Data pins float to high-impedance when the chip is deselected, outputs are disabled. or in x8 mode (Byte#=V,,J Data is intemallv latched during a write cvcle. CHIP ENABLE: Activates the device's control logic. input buffers, decoders and sense amplifiers. CE#-high deselects the device and reduces power consumption to standby levels. RESET/DEEP POWER-DOWN: Puts the device in deep power-down mode and resets internal automation. RP#-high enables normal operation. When driven low, RP# inhibits write operations which provides data protection during power transitions. Exit from deep power-down sets the device to read array mode. With RP#=V,,, block erase or word/byte write can operate to all blocks without WP# state. Block erase or word/byte write with Vt, Table 2. Pin Descriptions Name and Function INPUTS: Addresses are internally latched during a write cycle. Byte Select Address. Not used in x16 mode. Row Address. Selects 1 of 2048 word lines. Column Address. Selects 1 of 16 bit lines. i Rev. I.1 SHARP LHF80V07 7 2 PRINCIPLES OF OPERATION r 1 tA18-&1 7FFFF 7FOO0 7EFFF 7EOOO 7DFFF 7DOOil 7CFFF 7coOO 7BFFF 7BOOQ 7AFFF 7.&m 79FFF 79000 78FFF 78OOa 77FFF 7oOw 6FFFF 68000 67FFF 60000 5FFFF 58000 57FFF Top Boot 4K-word Boot Block 4K-word Boot Block 4K-word Parameter Block 4K-word Parameter Block 4K-word Parameter Block 4K-word Parameter Block 4K-word Parameter Block 4K-word Parameter Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block 32K-word Main Block I The LH28F800BVB-TTL90 Smart3 Flash memory includes an on-chip WSM to manage block erase and word/byte write functions. It allows for: 100% TTL-level control inputs. fixed power supplies during block erasure and word/byte write, and minimal processor overhead with RAM-like interface timings. After initial device power-up or return from deep powerdown mode (see Bus Operations). the device defaults to read array mode. Manipulation of external memory control pins allow array read, standby and output disable operations. Status register and identifier codes can be accessed through the CUI independent of the V,, voltage. High voltage on VP, enables successful block erasure and word/byte writing. All functions associated with altering memory contents-block erase, word/byte write, status and identifier codes-are accessed via the CUI and verified through the status register. Commands are written using standard microprocessor write timings. The CUI contents serve as input to the WSM, which controls the block erase and word/byte write. The internal algorithms are regulated by the WSM. including pulse repetition, internal verification and margining of data. Addresses and data are internally latch during write cycles. Writing the appropriate command outputs array data. accesses the identifier codes or outputs status register data. Interface software that initiates and polls progress of block erase and word/byte write can be stored in any block. This code is copied to and executed from system RAM during flash memory updates. After successful completion, reads Ire again possible via the Read Array command. Block :rase suspend allows system software to suspend a block erase to read/write data from/to blocks other than that which is suspend. Word/byte write suspend allows system ;oftware to suspend a word/byte write to read data from ury other flash memory array location. 0 1 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 50000 4FFFF 48000 47FFF -1oooo 3FFFF 38000 37FFF 3moo ZFFFF 28000 27FFF 20000 IFFFF 18000 17FFF 1OQOO OFFFF 07FFF 00000 32K-word Main Block 32K-word Main Block 32K-word Main Block 08000 Figure 3. Memory Map Rev. 1.1 SHARI= LHF8OVO7 2.1 Data Protection Depending on the application, the system designer may choose to make the V,, power supply switchable (available only when memory block erases or word/byte writes are required) or hardwired to VPPHIR. The device accommodates either design practice and encourages optimization of the processor-memory interface. When VPPIVPPLK. memory contents cannot be altered. The CUI, with two-step block erase or word/byte write command sequences, provides protection from unwanted operations even when high voltage is applied to V,,. All write functions are disabled when V,, is below the write lockout voltage V,,, or when RP# is at V,,. The device's boot blocks locking capability for WP# provides additional protection from inadvertent code or data alteration by block erase and word/byte write operations. Refer to Table 6 for write protection alternatives. 3.2 Output Disable With OE# at a logic-high level (V,,), are disabled. Output pins (DQ,-DQ,,) high-impedance state. the device outputs are placed in a 3.3 Standby CE# at a logic-high level (VrH) places the device in standby mode which substantially reduces device power consumption. DQO-DQ,, outputs are placed in a highimpedance state independent of OE#. If deselected during block erase or word/byte write. the device continues functioning, and consuming active power until the operation completes. 3.4 Deep Power-Down RP# at V, initiates the deep power-down mode. 3 BUS OPERATION The local CPU reads and writes flash memory in-system. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. 3.1 Read [nformation can be read from any block, identifier codes Jr status register independent of the V,, voltage. RP# can 5e at either V,, or V,,. The first task is to write the appropriate read mode :ommand (Read Array, Read Identifier Codes or Read Status Register) to the CUI. Upon initial device power-up x after exit from deep power-down mode. the device automatically resets to read array mode. Six control pins dictate the data flow in and out of the component: CE#, 3E#, WE#, RP#, WP# and BYTE#. CE# and OE# must be Iriven active to obtain data at the outputs. CE# is the device selection control, and when active enables the ;elected memory device. OE# is the data output DQorDQlj) control and when active drives the selected nemory data onto the I/O bus. WE# must be at V,, and iP# must be at V,, or V,,. Figure 11, 12 illustrates read L :ycle. In read modes, RP#-low deselects the memory. places output drivers in a high-impedance state and turns off all internal circuits. RP# must be held low for a minimum of loons. Time tpHQV is required after return from powerdown until initial memory access outputs are valid. After this wake-up interval, normal operation is restored. The CUI is reset to read array mode and status register is set to 80H. During block erase or word/byte write modes? RP#-low will abort the operation. RY/BY# remains low until the reset operation is complete. Memory contents being altered are no longer valid; the data may be partially erased or written. Time tpHwL is required after RP# goes to logic-high (V,,) before another command can be written. As with any automated device, it is important to assert RP# during system reset. When the system comes out of reset, it expects to read from the flash memory. Automated flash memories provide status information when accessed during block erase or word/byte write modes. If a CPU reset occurs with no flash memory reset. proper CPU initialization may not occur because the flash memory may be providing status information instead of array data. SHARP's flash memories allow proper CPU initialization following a system reset through the use of the RP# input. In this application, RP# is controlled by the same RESET# signal that resets the system CPU. Rev. 1.1 SHARP LHF8OVO7 9 .5 Read Identifier Codes Operation he read identifier codes operation outputs the manufacturer code and device code (see Figure 4). Using le manufacturer and device codes, the systemCPU can ltomatically match the device with its proper algorithms. 3.6 Write Writing commandsto the CUI enable reading of device data and identifier codes.They alsocontrol inspectionant clearing of the statusregister. When V,-=2.7V-3.6V ant VPt,=VPPH1,2, CUI additionally controls block erasure the and word/byte write. The Block Erasecommandrequiresappropriatecommanc data and an addresswithin the block to be erased. The Word/Byte Write command requires the command and address the location to be written. of The CUI does not occupy an addressable memory location. It is written when WE# and CE# are active. The address data needed execute a commandare latched and to on the rising edge of WE# or CE# (whichever goes high first). Standard microprocessorwrite timings are used. Figures 13 and 14illustrate WE# andCE# controlled write operations. Device Code Manufacturer Code 4 COMMAND Figure 4. Device Identifier CodeMemory Map DEFINITIONS When the V,, voltage IV,,,,. Read operationsfrom the status register, identifier codes, or blocks are enabled. Placing VP,,,,* on V,, enablessuccessfulblock erase and word/byte write operations. Device operations are selected by writing specific commands into the CUI. Table 4 definesthesecommands. Rev. 1.1 SHARI= LHF8OV07 Mode Read Output Disable Standby Deep Power-Down Read Identifier Codes Write Notes 8 `I, Table 3.1. Bus Operations(BYTE#=Vu.,)(l,z) RP# CE# OE# WE# Address Or VU, `1, Or `HH VI, VI, `1, VI, VI, `1, `1, V,, X X X X X X DQ,,,5 DOUT RY/BY#c3) X X X High Z High Z X X X X X See Figure 4 X High Z High Z High Z Note 5 DIN 10 4,lO 8 6,7,8 `1, Or VI, vnH `1, Or X X VI, vIH X X `1, VI, X VI, VI, vIiH VIEI Or `HH Mode Read Output Disable Standby Deep Power-Down Read Identifier Codes Write Notes 8 Table 3.2. Bus Operations(BYTE#=VIL)(1,2) RP# CE# OE# WE# Address vIH Or VHH vIH Or VHH VI, VIL `1, VI, `1, `1, `IH VW X X X X X X DQ,, Dour DQ,-,, High Z HighZ High Z High Z High Z X RY/BY#(3)X X X High Z High Z X X X X X See Figure 4 X HighZ High Z High Z Note 5 DIN 10 4,lO 8.9 fj>7>8 `1, Or vHH VI, vIH Or `HH VIHor vHH X X VI, `1, X X `1, VIL X VI, VIL NOTES: memory contents can be read, but not altered. 1. Refer to DC Characteristics. When V,,5V,,,,, and 2. X can be VI, or VI, for control pins and addresses, and V,, or VPPHIjz for V,,. See DC Characteristics for V,,, V,,,,,, voltages. 3. RY/BY# is V,, when the WSM is executing internal block erase or word/byte write algorithms, It is High Z during when the WSM is not busy, in block erase suspend mode (with word/byte write inactive), word/byte write suspend mode or deep power-down mode. 4. RP# at GNDk0.2V ensures the lowest deep power-down current. 5. See Section 4.2 for read identifier code data. 6. Command writes involving block erase or word/byte write are reliably executed when VPP=VPPH1/2 and V,,=2.7V-3.6V. Block erase or word/byte write with Vm SHARP LHF80V07 11 Table 4. Command Definitions(7) NOTES: 1. BUS operations are defined in Table 3.1 and Table 3.2. 2. X=Any valid address within the device. IA=Identifier Code Address: see Figure 4. A_, set to V,, or V,, in Byte Mode (BYTE#=V,,). BA=Address within the block being erased. The each block can select by the address pin A,, through A,, combination. WA=Address of memory location to be written. 3. SRD=Data read from status register. See Table 7 for a description of the status register bits. WD=Data to be written at location WA. Data is latched on the rising edge of WE# or CE# (whichever goes high first). ID=Data read from identifier codes. 4. Following the Read Identifier Codes command, read operations access manufacturer and device codes. See Section 4.2 foi read identifier code data. 5. If the block is boot block, WP# must be at V, or RP# must be at V,, to enable block erase or word/byte write operations. Attempts to issue a block erase or word/byte write to a boot block while WP# is V,, or RP# is V,,. 5. Either 40H or 1OH are recognized by the WSM as the word/byte write setup. 7. Commands other than those shown above are reserved by SHARP for future device implementations and should not be used. SHARI= LHF%OVO7 4.1 Read Array Command Upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal WSM has started a block erase or word/byte write. the device will not recognize the Read Array command until the WSM completes its operation unless the WSM is suspended via an Erase Suspend or Word/Byte Write Suspend command. The Read Array command functions independently of the V,, voltage and RP# can be V,, or V,,. 12 4.4 Clear Status Register Command Status register bits SR.5, SR.4. SR.3 or SR.l are set tc "1"s by the WSM and can only be reset by the Clear Statu: Register command. These bits indicate various failure conditions (see Table 7). By allowing system software tc reset these bits, several operations (such as cumulatively erasing multiple blocks or writing several words/bytes ir sequence) may be performed. The status register may be polled to determine if an error occurred during the sequence. To clear the status register, the Clear Status Register command (50H) is written. It functions independently 01 the applied V,, Voltage. RP# can be V,, or V,,. This command is not functional during block erase 01 word/byte write suspend modes. 4.2 Read Identifier Codes Command The identifier code operation is initiated by writing the Read Identifier Codes command. Following the command write, read cycles from addresses shown in Figure 4 retrieve the manufacturer and device codes (see Table 5 for identifier code values). To terminate the operation, write another valid command. Like the Read Array command, the Read Identifier Codes command functions independently of the V,, voltage and RP# can be V,, or V,,. Following the Read Identifier Codes command, the following information can be read: Table 5. Identifier Codes 4.5 Block Erase Command Erase is executed one block at a time and initiated by a two-cycle command. A block erase setup is first written. followed by an block erase confirm. This command sequence requires appropriate sequencing and an address within the block to be erased (erase changes all block data to FFFFH). Block preconditioning, erase? and verify are handled internally by the WSM (invisible to the system). After the two-cycle block erase sequence is written. the device automatically outputs status register data when read (see Figure 5). The CPU can detect block erase completion by analyzing the output data of the RY/BY# pin or status register bit SR.7. When the block erase is complete, status register bit SR.5 should be checked. If a block erase error is detected. the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode until a new command is issued. This two-step command sequence of set-up followed by execution ensures that block contents are not accidentally erased. An invalid Block Erase command sequence will result in both status register bits SR.4 and SR.5 being set to "1". Also, reliable block erasure can only occur when Vcc=2.7V-3.6V and VPP=VPPH1,2. In the absence of this high voltage. block contents are protected against erasure. If block erase is attempted while V,,IV,,,,, SR.3 and SR.5 will be set to "1". Successful block erase for boot blocks requires that the corresponding if set, that WP#=V,, or RP#=V,,. If block erase is attempted to boot block when the corresponding WP#=V,, or RP#=V,,, SR.l and SR.5 will be set to "1". Block erase operations with VIH The status register may be read to determine when a block :rase or word/byte write is complete and whether the operation completed successfully. It may be read at any ime by writing the Read Status Register command. After writing this command, all subsequent read operations output data from the status register until another valid :ommand is written. The status register contents are atched on the falling edge of OE# or CE#, whichever occurs. OE# or CE# must toggle to V,, before further .eads to update the status register latch. The Read Status iegister command functions independently of the V,, Joltage. RP# can be V,, or V,,. Rev. 1.1 SHARP LHF8OVO7 4.6 Word/Byte Write Command Word/byte write is executed by a two-cycle command write setup (standard 40H or sequence. Word/byte alternate 10H) is written, followed by a second write that specifies the address and data (latched on the rising edge of WE#). The WSM then takes over, controlling the word/byte write and write verify algorithms internally. After the word/byte write sequence is written, the device automatically outputs status register data when read (see Figure 6). The CPU can detect the completion of the word/byte write event by analyzing the RYlBY# pin or status register bit SR.7. When word/byte write is complete, status register bit SR.4 should be checked. If word/byte write error is detected, the status register should be cleared. The internal WSM verify only detects errors for "1"s that do not successfully write to "0"s. The CUI remains in read status register mode until it receives another command. Reliable word/byte writes can only occur when V,,=2.7V-3.6V and VPP=VPPHI,~. In the absence of this high voltage, memory contents are protected against word/byte writes. If word/byte write is attempted while V,SV,,,, status register bits SR.3 and SR.4 will be set to "1". Successful word/byte write for boot blocks requires that the corresponding if set, that WP#=V,, or RP#=V,,. If word/byte write is attempted to boot block when the corresponding WP#=V, or RP#=V,,, SR.1 and SR.4 will be set to " 1". Word/byte write operations with V, 4.7 Block Erase Suspend Command The Block Erase Suspend command allows block-erase interruption to read or word/byte write data in another block of memory. Once the block-erase processstarts, writing the Block Erase Suspendcommand requeststhat the WSM suspend the block erase sequence at a predeterminedpoint in the algorithm. The device outputs status register data when read after the Block Erase Suspendcommandis written. Polling statusregister bits SR.7 and SR.6 can determine when the block erase operation has been suspended(both will be set to "1"). RY/BY# will also transition to High Z. Specification twHRz2definesthe block erasesuspend latency. At this point, a Read Array command can be written to read data from blocks other than that which is suspended. A Word/Byte Write commandsequence also be issued can during erase suspendto program data in other blocks. Using the Word/Byte Write Suspend command (see Section 4.8), a word/byte write operation can also be suspended. During a word/byte write operation with bIock erasesuspended, statusregister bit SR.7 will return to "0" and the RY/BY# output will transition to VOL. However. SR.6 will remain "1" to indicate block erase suspend status. The only other valid commands while block erase is suspendedare Read Status Register and Block Erase Resume.After a Block EraseResumecommandis written to the flash memory, the WSM will continue the block erase process. Status register bits SR.6 and SR.7 will automatically clear and RY/BY# will return to VOL. After the Erase Resume command is written, the device automatically outputs statusregister data when read (see Figure 7). V,, must remain at V,,,,,, (the sameV,, level usedfor block erase)while block eraseis suspended. RP# must also remain at Vr, or V,, (the sameRP# level usedfor block erase).WP# must alsoremain at V,, or V,, (the same WP# level used for block erase). Block erase cannot resume until wordlbyte write operations initiated during block erasesuspend have completed. Rev. 1.1 SHARI= LHF8OV07 14 1 4.8 Word/Byte Write Suspend Command The Word/Byte Write Suspend command allows word/byte write interruption to read data in other flash memory locations. Once the word/byte write process starts, writing the Word/Byte Write Suspend command requests that the WSM suspend the word/byte write sequence at a predetermined point in the algorithm. The device continues to output statusregister data when read after the Word/Byte Write Suspendcommand is written. Polling status register bits SR.7 and SR.2 can determine when the word/byte write operation has been suspended (both will be set to "1"). RY/BY# will also transition to High Z. Specification twHRZl defines the word/byte write suspend latency. At this point, a Read Array command can be written to read data from locations other than that which is suspended. The only other valid commands while word/byte write is suspended ReadStatus Registerand are Word/Byte Write Resume. After Word/Byte Write Resume command is written to the flash memory. the WSM will continue the word/byte write process. Status register bits SR.2 and SR.7 will automatically clear and RY/BY# will return to V,,. After the Word/Byte Write Resume command is written, the device automatically outputs status register data when read (seeFigure 8). V,, must remain at VPPH1,2(the same V,, level used for word/byte write) while in word/byte write suspend mode. RP# must alsoremain at V,, or V,, (the sameRP# level usedfor word/byte write). WP# must alsoremain at VI, or Vt, (the sameWP# level usedfor word/byte write). 4.10 Block Locking This Boot Block Flash memory architecture features two hardware-lockable boot blocks so that the kernel code for the system can be kept secure while other blocks are programmedor erasedasnecessary. 4.10.1 VPP=VIL for Complete Protection The V,, programming voltage can be held low for complete write protection of all blocks in the flash device. 4.102 WP#=V,, for Block Locking The lockable blocks are locked when WP#=Vt,; any program or eraseoperation to a locked block will result in an error, which will be reflected in the statusregister. For top configuration, the top two boot blocks are lockable. For the bottom configuration. the bottom tow boot blocks are lockable. Unlocked blocks can be programmed or erasednormally (UnlessV,, is below VPPLK). 4.10.3 WP#=VIH for Block Unlocking WP#=V,, unlocks all lockable blocks. Theseblocks can now be programmed erased. or WP# controls 2 boot blocks locking and V,, provides protection against spurious writes. Table 6 defines the write protection methods. 4.9 Considerations of Suspend After the suspend commandwrite to the CUI, read status register commandhas to write to CUI, then statusregister bit SR.6 or SR.2 shouldbe checked for placesthe device in suspend mode. Operation Block Erase or Word/Byte Write VP, VI, `vPPLK Table 6. Write RP# WP# x X X VI, X `HH `1, , VI, VI, Protection Alternatives Effect All Blocks Locked. All Blocks Lockted. All Blocks Unlocked. 2 Boot Blocks Locked. 1All Blocks Unlocked. I Rev. 1.1 SHARI= LIm3ovo7 Table 7. Status Register Definition 1 WBWS 1 VPPS 1 WBWSS 4 3 2 NOTES: SR.7 = WRITE STATE MACHINE 1 = Ready 0 = Busy STATUS (WSMS) Check RY/BY# word/byte write SR.7="0". or SR.7 to determine block erase or completion. SR.6-0 are invalid while 1.5 WSMS 7 1 ESS 6 ES 5 ( DPS 1 R 0 SR.6 = ERASE SUSPEND STATUS (ESS) 1 = Block Erase Suspended 0 = Block Erase in Progress/Completed SR.5 = ERASE STATUS (ES) 1 = Error in Block Erasure 0 = Successful Block Erase SR.4 = WORD/BYTE WRITE STATUS (WBWS) 1 = Error in Word/Byte Write 0 = Successful Word/Byte Write SR.3 = V, STATUS (VPPS) 1 = V,, Low Detect, Operation Abort O=V,OK SR.2 = WORD/BYTE WRITE SUSPEND STATUS (WBWSS) 1 = Word/Byte Write Suspended 0 = Word/Byte Write in Progress/Completed SR. 1 = DEVICE PROTECT STATUS (DPS) 1 = WP# or RP# Lock Detected, Operation Abort 0 = Unlock SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) SR.3 does not provide a continuous indication of V,, level. The WSM interrogates and indicates the V,, level only after Block Erase or Word/Byte Write command sequences. SR.3 is not guaranteed to reports accurate feedback only when vYY~vYY,ll2~ If both SR.5 and SR.4 are "1"s after a block erase attempt, an improper command sequence was entered. The WSM interrogates the WP# and RP# only after Block Erase or Word/Byte Write command sequences. It informs the system, depending on the attempted operation, if the WP# is not V,,, RP# is not V,,. SR.0 is reserved for future use and should be masked out when polling the status register. Rev. 1.1 SHARP LHF8OVO7 16 BUS operatm Command Commenls Erase Setup Block Address Daw=?OH Addr=Wlthln Daa=DOH Addr=Within Block to be Erased Block Lo be Erased Block Address Read Erase Loop Standby Check SR.7 I=WSMReady O=WSM Busy Repeat for subsequent block ems"res. Full status check can be done after each block uasc or after a sequrnce of block crawrcs. Check rf Desired R'LL STAR'S CHECK PROCEDLXE Command Commentr Standby Check SR.3 l=Vpp Error Dctcct Chzck SR.1 I=Devicz Protect Detect Check SR.1.5 Both I=Command Standby Standby Ssquencc Error Standby Check SR.5 l=Block Erase Error SR.5.SR.4.SR.3 and SR.1 us only cleared by tie clear Status Register Command in cases where multiple blocks are erased beforc full status is checked. Figure 5. Automated Block Erase Flowchart Rev. 1.1 SHARP LHl-`8UVU I I! Start Command COlTl"X"lS Write IOH or 10H. Address Setup Word/Byte Write DnladOH cx 10H Addr=Locat,on to Be Wrmen Data=Data 10 Bc Wntwn Addr=Loation to Be Wnttsn Word/Byte wnrc WordAp Data and Address Wr,ts Status Rep,ster Data 1 Suspnd Wwd/Byte wrns Loop Check SR.7 I=WSM Ready O=WSM Busy Full Status Check If Deared Word/Byte wms Complete FL-LL STATCS CHECK PROCEDL'RE . BUS Operation Command CO"Ull?"lS Read Status Reglstrr Dala(See Above) Standby Check SR.? ,=VpP Error Dsr Sw,dby SR.J.SR.3 and SR. I are only cleared by the Clear Status Rcg~stsr command m cases where multiple locations are uwtten before full S,P,U.X checked. is Figure 6. Automated Word/Byte Write Flowchart Rev. 1.1 SHARF' LHF80V07 18 BUS @erauon Command Commcnls Wrik Datn=BOH Ad&=X Star,,s Rzglstzr Data Read Addr=X Check SR.7 l=WSMReady O=WSM Busy Check SR.6 I=Block Erase Suspended OeBlock Erase Completed Erase Resume Data-WH Addr-X Standby Standby Write Figure 7. Block Erase Suspend/Resume Flowchart Rev. 1.1 SHARI= LHF8OVO7 BUS operation Command Comments Writs BOW Data=BOH Ad&=X Read Standby Check SR.7 I=WSM Ready C=WSM Busy Check SR.? I=Word/B~ze Wrltc Suspended O=Word/B>zc Writs Completed Data=FFH Ad&=X Standby Rad Array Word/Byte write Completed Read Word/B)~c Write Resume Daa=DOH Addr=X Word/Byte Writs Resumed Figure 8. Word/Byte Write Suspend/Resume Flowchart Rev. 1.1 SIiARl= LHF80V07 5 DESIGN CONSIDERATIONS 5.1 Three-Line Output Control The device will often be used in large memory arrays. SHARP provides three control inputs to accommodate multiple memory connections. Three-line control provides for: a. Lowest possible memory power dissipation. b. Complete assurance that data bus contention will not occur. To use these control inputs efficiently, an address decoder should enable CE# while OE# should be connected to all memory devices and the system's READ# control line. This assures that only selected memory devices have active outputs while deselected memory devices are in standby mode. RP# should be connected to the system POWERGOOD signal to prevent unintended writes during system power transitions. POWERGOOD should aiso toggle during system reset. 5.3 Power Supply Decoupling Flash memory power switching characteristics require careful device decoupling. System designers are interested in three supply current issues; standby current levels. active current levels and transient peaks produced by falling and rising edges of CE# and OE#. Transient currenl magnitudes depend on the device outputs' capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a O.lpF ceramic capacitor connected between its V,, and GND and between its V,, and GND. These high-frequency. low inductance capacitors should be placed as close as possible to package leads. Additionally, for every eight devices, a 4.7pF electrolytic capacitor should be placed at the array's power supply connection between V,, and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace inductance. 5.4 Vpp Trace on Printed Circuit Boards Updating flash memories that reside in the target system requires that the printed circuit board designer pay attention to the V,, Power supply trace. The V,, pin supplies the memory cell current for word/byte writing and block erasing. Use similar trace widths and layout considerations given to the V,, power bus. Adequate V,, supply traces and decoupling will decrease V,, voltage spikes and overshoots. 5.2 RY/BY#, Block Erase and Word/Byte Write Polling RYlBY# is an open drain output that should be connected to V,, by a pull up resistor to provide a hardware method of detecting block erase and word/byte write completion. It transitions low after block erase or word/byte write commands and returns to High Z when the WSM has finished executing the internal algorithm. RY/BY# can be connected to an interrupt input of the system CPU or controller. It is active at all times. RY/BY# IS also High Z when the device is in block erase suspend (with word/byte write inactive), word/byte write suspend Jr deep power-down modes. Rev. 1.1 SHARP LHF8OVO7 21 5.5 VCC, Vpp, RP# Transitions Block erase and word/byte write are not guaranteed if V,, falls outside of a valid VPPHIR range, V,, falls outside of a valid 2.7V-3.6V range. or RP##V,, or V,,. If V,, error is detected, status register bit SR.3 is set to "1" along with SR.4 or SR.5, depending on the attempted operation. If RP# transitions to V,, during block erase or word/byte write, RY/BY# will remain low until the reset operation is complete. Then, the operation will abort and the device will enter deep power-down. The aborted operation may leave data partially altered. Therefore, the command sequence must be repeated after normal operation is restored. Device power-off or RP# transitions to V, clear the status register. The CUI latches commands issued by system software and is not altered by V,, or CE# transitions or WSM actions. Its state is read array mode upon power-up, after exit from deep power-down or after V,, transitions below VLKO. After block erase or word/byte write, even after V,, transitions down to V,,,, the CUI must be placed in read array mode via the Read Array command if subsequent access to the memory array is desired. A system designer must guard against spurious writes for V,, voltages above V,,, when V,, is active. Since botlWE# and CE# must be low for a command write, driving either to V,, will inhibit writes. The GUI's two-stey command sequence architecture provides added level o protection against data alteration. WP# provide additional protection from inadvertent cod< or data alteration. The device is disabled while RP#=V,, regardless of its control inputs state. 5.7 Power Dissipation When designing portable systems. designers must considel battery power consumption not only during device operation, but also for data retention during system idle time. Flash memory's nonvolatility increases usable battery life because data is retained when system power is removed. In addition, deep power-down mode ensures extremely low power consumption even when system power is applied. For example, portable computing products and other power sensitive applications that use an array of devices for solid-state storage can consume negligible power by lowering RP# to V, standby or sleep modes. If access is again needed, the devices can be read following the fPHQV and tPHWL wake-up cycles required after RP# is first raised to VIH. See AC CharacteristicsRead Only and Write Operations and Figures 11, 12> 13 and 14 for more information. 5.6 Power-Up/Down Protection The device is designed to offer protection against lccidental block erasure or word/byte writing during power transitions. Upon power-up, the device is indifferent as to which power supply (V,, or V,,) ?owers-up first. Internal circuitry resets the CUI to read u-ray mode at power-up. Rev. 1.1 SHARP LHF8OVO7 22 6 ELECTRICAL SPECIFICATIONS 6.1 Absolute Maximum Ratings* Operating Temperature During Read, Block Erase and Word/Byte Write . .... .... .... ... .... .... ... ... ... 0C to +7O"C(r) Temperature under Bias .. ... .... .... ... ... ... - 10C to +SO"C Storage Temperature .. .... .... .... .... ... .... .... ... -65C to +125"C Voltage On Any Pin (except V,,, V,,, and RP#) ... .... .... . -0.5V to +7.OV(*) V,, Supply Voltage .... ..... .... .... .... ... ... .... . -0.2V to +7.OV(*) V,, Update Voltage during Block Erase and Word/Byte Write .. ... .... -0.2V to +l 4.0V(2,3) RP# Voltage _....................................... -0.5V to +14.0V(*y3) Output Short Circuit Current .... .... .... ... ... .... .... ... ... 100mA(4) *WARNING: Stressing the device beyond the "Absolute Maximan Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability. NOTES: 1. Operating temperature is for commercial temperature product defined by this specification. 2. All specified voltages are with respect to GND. Minimum DC voltage is -0SV on input/output pins and -0.2V on V,, and V,, pins. During transitions, this level may undershoot to -2.OV for periods <20ns. Maximum DC voltage on input/output pins and V,, is V,,+OSV which, during transitions, may overshoot to Vcc+2.0V for periods <20ns. 3. Maximum DC voltage on V,, and RP# may overshoot to +14.OV for periods <20ns. 4. Output shorted for no more than one second. No more than one output shorted at a time. 6.2 Operating Conditions Temperature Symbol TA vcc Parameter Operating Temperature Vcc Supply Voltage (2.7V-3.6V) Min. 0 2.7 Max. +70 3.6 Unit "C V Test Condition Ambient Temperature 5.2.1 CAPACITANCE( Symbol cIN `OUT *) T,=+25"C, TYP. 7 9 f=lMHz Max. 10 12 Unit PP PP v,,=o.ov v,U,=o.ov Condition Parameter Input Capacitance Output Capacitance VOTE: I. Sampled, not 100% tested. Rev. 1.1 SHARP LHF8OVO7 6.2.2 AC INPUT/OUTPUT TEST CONDITIONS 23 AC test inputs are driven at 2.7V for a Logic "1" and O.OV for a Logic "0." Input timing begins, and output timing ends, at 1.35V. Input rise and fall times (107~ to 90%) ~10 ns. Figure 9. Transient Input/Output Reference Waveform for V,,=2.7V-3.6V Test Confieuration Caoacitance Loading Value Test Configuration C,(pF) Vcc=2.7V-3.6V 30 lN914 CL Includes Jig Capacitance Figure 10. Transient Equivalent Testing Load Circuit Rev. 1.1 SHARI= LHF80V07 6.2.3 DC CHARACTERISTICS DC Characteristics V,,=27V-3.6V Notes Max. TYP. 1 *OS 1 1,336, 10 1,3,6 0.2 `CCD `CCR 24 Sym. IL1 IL0 Parameter Input Load Current Output Leakage Current V,, Standby Current Unit 11A cul\ Test Conditions VCC=VCCMax. V,,=V,, or GND p=wOUT=VCC or GND CMOS Inputs Vcc=VccMax. CE#=RP#=V,,&2V TTL Inputs VCC=VCCMax. CE#=RP#=V,, RP#=GND*0.2V IoUT(RY/13Y#)=OmA CMOS Inputs V,,=V,,Max., CE#=GND f=SMHz, I,,,=OmA TlL Inputs VCC=VCCMax., CE#=GND f=SMHz. IoUT=OmA V,,=2.7V-3.6V V,,=11,4V-12.6V V,,=2.7V-3.6V V,,=11.4V-12.6V CE#=V, VPP~VCC vPP'vcc *OS 25 50 kcs ClA 2 10 25 mA llA mA V,, Deep Power-Down V,, Read Current Current 1,lO 1,596 5 15 30 ICC, `CC, mA mA mA mA nL4 mA PA PA I.rA mA mA mA mA ClA V,, Word/Byte Write Current V,, Block Erase Current V,, Word/Byte Write or Block Erase Suspend Current V, Standby or Read Current VP, Deep Power-Down Current VP, Word/Byte Write Current V, Block Erase Current 137 1,7 12 1 1 1,7 177 1 5 5 4 4 1 +2 10 0.1 12 8 10 17 12 17 12 6 &15 200 5 40 30 25 20 200 kcws `CCES IPPS `PPR `PPD IPPW `PPE RP#=GND+0.2V Vpp=2.7V-3.6V VP,=1 1.4V- 12.6V Vpp=2.7V-3.6V Vpp=11.4V-12.6V VPP=VPPHI I2 IPPWS `PPES VP, Word/Byte Write or Block Erase Suspend Current Rev. 1.1 SHARI= LHF8OVO7 DC Characteristics (Continued) Vo=2.7V-3.6V Max. Notes Min. 7 -0.5 0.8 7 2.0 +",c? 337 3.7 3,7 2.4 0.85 Vcc 2% VPPLK `PPHl `PPH2 25 Sym. V,, VIH VOL `OHI `OH2 Parameter Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Cl-rL) Output High Voltage (CMOS) Unit V V V V V V Test Conditions 0.4 yccz;=~in. OL ycc~pccin~ OH. ;CflCdMin. OH . Vcc=Vcc Min. IoH'- lOOpA V, Lockout Voltage during Normal Operations V, Voltage during Word/Byte Write or Block EraseOperations VP, Voltage during Word/Byte Write or Block EraseOperations RP# Unlock Voltage 4,7 2.7 11.4 2.0 11.4 1.5 3.6 12.6 12.6 V V V V V Unavailable WP# VHH 83 NOTES: 1. All currentsare in RMS unlessotherwisenoted. Typical values at nominal V,, voltage and T,=+25"C. mode, the 2. ICC,, md `CCES are specified with the device de-selected.If read or wordlbyte written while in erasesuspend device's current draw is the sumof Iccws or ICCES ICCRor ICC,, respectively. and 3. IncludesRY/BY#. in 4. Block erases and word/byte writes are inhibited when VppIVppLK, and not guaranteed the range betweenVppLK(max.) andVppHl(min.), betweenVppHl(max.) and VppH2(min.)and above VppH2(max.). 5. Automatic Power Savings(APS) reducestypical ICC, to 3mA at 2.7V V,, in static operation. 6. CMOS inputs are either Vcc&0.2V or GNDk0.2V. TTL inputs are either V,, or V,,. 7. Sampled,not 100%tested. 8. Boot block erasesand word/byte writes are inhibited when the correspondingRP#=V,, and WP#=Vl,. Block eraseand word/byte write operationsare not guaranteed with VrH SHARP LHF8OVO7 6.2.4 AC CHARACTERISTICS - READ-ONLY OPERATIONS(l) 26 NOTES: 1. See AC Input/Output Reference Waveform for maximum allowable input slew rate. 2. OE# may be delayed up to tELQV-bLQV after the falling edge of CE# without impact on tELQv. 3. Sampled, not 100% tested. 4. If BYTE# transfer during reading cycle, exist the regulations separately. Rev. 1.1 SHARI= Llw8OVO7 27 Standby VIH iDDRESSES VIL Device Address Selection Address Stable Data Valid OE#(G) :"I-- WE#(W) hi f----- 4 HIGH Z tAVQV VOH DATA(D/Q) --;~j HIGH Z (DQo-DQd VOL I b "cc tPHQV VIH ~#(P) VIL -----------7 I Figure 11. AC Waveform for Read Operations Rev. 1.1 SHARP LHF8OVO7 28 II Standby VIH .DDRESSES(A) VIL Address Device Selection Address Stable Data Valid ____-______ OE#(G) y--- VIH BYTE#(Fj VtL _______---___________ HIGH Z VOH DATA(D/Q) (DQo-DQ7) VOL ___-_-_---4 VOH DATA(D/Q) (DQs-DQls) VOL HIGH Z Data output HIGH Z Figure 12. BYTE# timing Waveform Rev. I.1 SHARP LHFSOV07 29 6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS(l) NOTES: 1. Read timing characteristics during block erase and word/byte write operations are the same as during read-only operations. Refer to AC Characteristics for read-only operations. 2. Sampled, not 100% tested. 3. Refer to Table 4 for valid A,, and D,, for block erase or word/byte write. 4. V,, should be held at V,,,t,z (and if necessary RP# should be held at V,,) until determination of block erase or word/byte write success (SR.1/3/4/5=0). 5. If BYTE# switch during reading cycle, exist the regulations separately. Rev. 1.1 SHARP LHF80V07 30 ADDRESSES(A) CE#(E) OE#(Gl WE#(W) DATA(D/Ql BYTE#(F) RY/BY#(R) WPW) bHHWH , VHH RPNP) VIH .- vppw NOTES: 1. V,-c power-up and standby. 2. Write block erase or word/byte write setup. 3. Write block erase confirm or valid address and data 4. Automated erase or program delay. 5. Read status register data. 6. Write Read Array command. Figure 13. AC Waveform for WE#-Controlled Write Operations Rev. 1.1 SHARP LHF8OVO7 6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES(l) NOTES: 1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup. hold, and inactive WE# times should be measured relative to the CE# waveform. 2. Sampled, not 100% tested. 3. Refer to Table 4 for valid A,, and D,, for block erase or word/byte write. 4. V,, should be held at V,,,,,, ( and if necessary RP# should be held at V,,) until determination of block erase or word/byte write success (SR.1/3/4/5=0). 5. If BYTB# switch during reading cycle, exist the regulations separately. Rev. 1.1 SHARI= LHFSOV07 32 VIH ADDRESSES(A) VIL CE#(E) OE#(G) VIH WEKW) VIL VIH DATA(D/Q) VIH BYTE#(F) RY/BY#(R) WP#(S) RPMP) VIH ,` NO-l-ES: 1. VCC power-up and standby. 2. Write block erase or word/byte write setup. 3. Write block erase confirm or valid address and data. 4. Automated erase or program delay 5. Read status register data. 6. Write Read Array command Figure 14. AC Waveform for CE#-Controlled Write Operations Rev. 1.1 SHARP LHF8OVO7 RESET OPERATIONS RY/BY#(R) VOL VIH RP#(P) VU (A)Reset High Z RY/BY#(R) VOL VIH During Read Array Mode RP#(P) VIL (B)Reset 2.w vcc VU VIH During Block Erase or Word/Byte Write L I hVPH - RP#(P) VIL i (C)RP# rising Timing Figure 15. AC Waveform for Reset Operation Reset AC Specifications Sym. `PLPH tPLRZ t2VPH Parameter RP# Pulse Low Time (If RP# is tied to V,,. this specification is not applicable) RP# Low to Reset during Block Erase or Word/Byte Write Vcc 2.7V to RP# High Notes V,,=2.7V-3.6V Max. Min. 100 Unit ns 12 3 22 100 P ns VOTES: 1. If RP# is asserted while a block erase or word/byte write operation is not executing, the reset will complete within loons. !. A reset time, tpHQVz is required from the later of RY/BY# going High Z or RP# going high until outputs are valid. 3. When the device power-up, holding RP# low minimum IOOns is required after V,, has been in predefined range and also has been in stable there. Rev. 1.1 SHARP LHF8OVO7 34 6.2.8 BLOCK ERASE AND WORD/BYTE WRITE PERFORMANCE(3) NOTES: 1. 2. 3. 4. Typical values measured T,=+25"C and nominal voltages. Subject to changebasedon device characterization. at Excludes system-leveloverhead. Sampledbut not 100% tested. All valuesare in word mode (BYTE#=V,,). At byte mode (BYTE#=V,,), thosevalues are double. Rev. 1.1 SHARP 7 Package and packing specification LHF80V07 35 Package Outline Specification Refer to drawing No.AA2 034 2. Markings 2 - 1. Marking contents ( 1) Product name : F800BVBTTLSO (2) Company name : SHARP ( 3 ) Date code (Example) Y Y 1. 2-2. (4) The marking of "JAPAN" indicates Marking layout Refer to drawing No.AA2 034 (This layout does not define the dimensions Indicates the product was manufactured in the WWth week of 19YY. - Denotes the production ref.code (l-3) Denotes the production week. (01,02,03, . . . * . 52,53) Denotes the production year. (Lower two digits of the year.) the count ry of origin. of marki ng character and marking position.) 3. Packing Specification (Dry packing for surface mount packages) Dry packing is used for the purpose of maintaining IC quality after mounting packages on the PCB (Printed Circuit Board). If the surface mount type package absorbs a large amount of moisture, this moisture may suddenly vaporize into steam when the entire package is heated during the reflow soldering process. This causes expansion and results in separation between the resin and insert material, and sometimes cracking of the package. This dry packing is designed to prevent the above problem from occurring in surface mount packages. 3 - 1 . Packing Materials Mater ial Name Material Specificaiton Purpose Tray Conductive plastic(lOOdevices/tray) Fixing of device ___..________._.____.~~~~~~.~~~~..~~~~~-~~~~~-~~~~...-~~~~..---~~~~..-----~~~.~-.---~~~~~~~..-~~~~~~.~~~~~.~~~~~~.-~~~~~.------------------------------Conductive plast ic (It ray/case) Upper cover tray Fixing of device __.__.______...__.__~~..~~~~~---~~~~-~~~~..-~~~.-.--~--~~~~~~..~~~~~~~~...~~~~~~~~..---~~~~~~~~--~~~~~~~-~~~~~--~~~~~~~-~~~~~.~~~....----~.--------. Laminated aluminum bag Aluminum polyethylene (lbag/case) Drying of device _.__________.___________________________~~~~~~~~~~..~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~.~.~~~~~~~~~~~~~~ Des iccant Silica gel Drying of device _.__________________-~.~~~~~-~~~~~--~~~...-~~...----.-~-~~~~...~~~~~~~~.--~~~~~~~~..-~~~~~~~~~~--~~~~~~~-~~~~~-~~~~~~--~~~~..-~~~~.------...------Polypropylene P P band (5pcs/case) Fixing of tray __________-_.____.---~.~~~-~~~~~~-~~~~~..--~~..-----.---~~~....~-~~~~~~~..---~~~~~~~~~----~~~~~~~-~~-~~ __.._____________---____________________---~~~..-----Inner case Card board (lOOOdevices/case) Packaging of _________._______----~~~~~--~~~.--~~~~..---...-------~~~....---~~.....----~~~~....---~~~~~~..~~-~~~~~..-- device ___----____----____.-~~~...----...-------.--------Paper Label Indicates part number,quantity and date of manufacture _.._______._.__._....~~~....~~~-.~~~~~~~~~~-~~~~...-~~~~--~-~~~~-~~-~~~~~~~~~-~--~~~~~~~-~-~.~~~~~---~~~~..~~~~~~~.~~~~~~--~~~~~-~~~~..-~~~~.. Outer case Card board Outer packing of tray (Devices shall be placed into a tray in the same direction.) SHARP 3-2. Outline dimension Refer to attached of tray drawing LHF80V07 36 4. 4-l. Storage and Opening of Dry Packing the dry pack i ng Store under conditions shown below befo re opening : 5-40C (1) Temperature range : 80% RH or less (2) Humidity 4-2. Notes on opening the dry packing (1) Before opening the dry packing, prepare a working table grounded against ESD and use a grounding strap. (2) The tray has been treated to be conductive or anti-static. device is transferred to another tray, use a equivalent which is If the tray. 4-3. Storage after opening the dry packing Perform the following to prevent absorption of moisture after opening. (1) After opening the dry packing, store the ICs in an environment with a temperature of 5--25C and a relative humidity of 60% or less. If doing reflow soldering once, mount ICs within 4 days after the opening. If doing reflow soldering twice, do the first mounting within 4 days after the opening and do the second mounting within 4 days after the first mounting. (2) To re-store the ICs for an extended period of time within 4 days after the ICs in the dry opening the dry packing, use a dry box or re-seal packing with desiccant (whoes indicater is blue), and store in an environment with a temperature of 5-40C and a relative humidity of 80% or less, and mount ICs within 2 weeks. (3) Total period of storage after first opening and re-opening is within 4 days, and store the ICs in the same environment as sect ion 4-3. (I). First ICs in dry packing opening+ V XI +re-sealing+ Y -`re-opening- Xz -mount ing 5-25C 60%RH or less 5-40C SO%RH or less 5-25C 60%RH or less 4 - 4. Baking (drying) before mounting (1) Baking is necessary (A) If the humidity indicator in the desiccant becomes pink (B) If the procedure in section 4-3 could not be performed (2) Recommended baking conditions If the above conditions (A) and (B) are applicable, bake it before mounting, The recommended conditions are 1-3 hours at 120 ~~""C. Heat resistance tray is used for shipping tray. (3) Storage after baking After baking ICs, store the ICs in the same environment as sect ion 4-3. (1). SHARP 5. Surface Mount Conditions Please perform the following quality. LHF80V07 37 conditions when mounting ICs not to deteriorate IC 5-l. ,Soldering conditions Mounting Method Reflow soldering Temperature and Duration Peak temperature of 240C or less, duration of less than 15 seconds above 230C. 200C or over ,durat ion of 30-50 seconds. Preheat temperature of 125~150C duration of less than 180 seconds. Temperature increase rate of l--4"C/second. flux : 25 Watts/liter : Total 1 minute : 15-40C Measurement Point IC package surface 5- 2. Conditions for removal of residual (1) Ultrasonic washing power (2) Washing time ( 3 > Solvent temperature or less maximum , J SHARF' I LHF80V07 ,I NDEX TOP VIEW------ F8OOBVBTTLSO JAPAN v I ---_ -:' I I \ \ \ \ 0 1 / \\ `. --___-y .' /' A-l \ \ J( I I I I I\ \ 0 . 0. 4 T'TF. 01 a p_ BOTTOM VIEW -- I I t ,zI - 1. 2 TYP. cbo.45 20.03 $ 60. 30 @@0.15@ @ S AB SCD %lq NAME ; FBGA048-P-0808 %iM I UNIT ! mm DRAWING i AA2034 NO. tB% NOTE SHARP LHF80V07 -r h fC Aa -1 : p.3 !7.9 r 25.0~0.3*4=100.0~0.3 I 17.4 w 5.8 35.8 2:: %vF~ JAME 1 LCSP80-0808TCT-RH DRAWING NO. / CV812 i+.&{Z ; UNIT 1 mm fiiwi NOTE SHARf= LHE3OVO7 Flash memory LHFsOV(B)XX family Data Protection (TSOP package, CSPpackage) in the specification may be 40 Noises generated having a level exceeding operating the limit specified under specific conditions on some systems. may be interpreted as false systems designs, as Such noises, To protect operating appropriate: 1) Protecting By setting Parameter when induced onto WE# signal undesired the data stored in the flash memory should or power supply, memory against commands, causing with memory updating. unwanted overwriting, write protect have the following the flash data in specific a WP# to low, only and main blocks etc., block the boot block by storing can be protected against overwriting. cannot be locked. them in the boot block. operation is enabled for all blocks. to RP#, overwrite System program, For further (See chapter can be locked is applied When a high voltage 4.10) information on controlling of WP# and RP#, refer to the specification. 2) Data protection When the level flashmemory write through Vpp voltage), write operation on the intheblocksarecompletely of Vpp is lower than VPPLK (lockout is disabled. All blocks are lockedandthedata protected. voltage, through operation refer RP# power up and power down sequence memory is disabled, write such as voltage protecting all on the flash refer to the specification. (See chapter 4.10 and 6.2.3. > For the lockout 3) Data protection transition, blocks. write When the RP# is kept low during For the detai 1s of RP# control, 4) Noise Consider rejection noise of WE# to the specification. (See chapter 5.6 and 6.2.7. > rejection of WE# in order to prevent false write command input. Rev 1.1 |
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